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| Advanced Technical Information HiPerFASTTM IGBT IXGN 200N60B VCES IC25 VCE(sat) = 600 V = 200 A = 2.1 V E Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg VISOL Md Weight Test Conditions T J = 25C to 150C T J = 25C to 150C; RGE = 1 MW Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 2.4 W Clamped inductive load, L = 30 mH TC = 25C Maximum Ratings 600 600 20 30 200 120 400 ICM = 200 @ 0.8 VCES 600 -55 ... +150 150 -55 ... +150 V V V V A A A A W C C C V~ V~ SOT-227B, miniBLOC E G E C G = Gate, C = Collector, E = Emitter either emitter terminal can be used as Main or Kelvin Emitter 50/60 Hz IISOL 1 mA t = 1 min t=1s 2500 3000 Mounting torque Terminal connection torque (M4) 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g Features * International standard package miniBLOC * Aluminium nitride isolation - high power dissipation * Isolation voltage 3000 V~ * Very high current, fast switching IGBT * Low VCE(sat) - for minimum on-state conduction losses * MOS Gate turn-on - drive simplicity * Low collector-to-case capacitance (< 50 pF) * Low package inductance (< 5 nH) - easy to drive and to protect Applications * AC motor speed control * DC servo and robot drives * DC choppers * Uninterruptible power supplies (UPS) * Switch-mode and resonant-mode power supplies Advantages * Easy to mount with 2 screws * Space savings * High power density Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25C TJ = 125C 5.5 200 2 400 2.1 V V mA mA nA V BVCES VGE(th) ICES IGES VCE(sat) IC IC = 1 mA , VGE = 0 V = 1 mA, VCE = VGE VCE = VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V IXYS reserves the right to change limits, test conditions, and dimensions. 98606 (5/99) (c) 2000 IXYS All rights reserved 1-2 IXGN 200N60B Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 50 75 S miniBLOC, SOT-227 B gfs IC = 60 A; VCE = 10 V, Pulse test, t 300 ms, duty cycle 2 % C ies Coes C res Qg Qge Qgc td(on) t ri Eon td(off) t ri Eoff td(on) t ri Eon td(off) t ri Eoff Inductive load, TJ = 25C IC = 100A, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 2.4 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ = 125C IC =100A, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 2.4 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG IC = IC90, VGE = 15 V, VCE = 0.5 VCES VCE = 25 V, VGE = 0 V, f = 1 MHz 11000 680 190 350 72 131 60 45 2.4 200 160 5.5 360 280 9.6 pF pF pF nC nC nC ns ns mJ ns ns mJ A B C D E F G H J K L M N O M4 screws (4x) supplied Dim. Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 38.00 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.23 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 Inches Min. Max. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.496 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004 60 60 4.8 290 250 8.7 ns ns mJ ns ns mJ P Q R S T U RthJC RthCK 0.05 0.21 K/W K/W (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2 |
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